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Normally‐Off Operation of Lateral Field‐Effect Transistors Fabricated from Ultra‐Pure GaN/AlGaN Heterostructures
Normally‐Off Operation of Lateral Field‐Effect Transistors Fabricated from Ultra‐Pure GaN/AlGaN Heterostructures
2020
S. Schmult
Steffen Wirth
V.V. Solovyev
Rico Hentschel
Andre Wachowiak
Tobias Scheinert
A. Großer
I. V. Kukushkin
Thomas Mikolajick
Keywords:
Condensed matter physics
Heterojunction
Physics
Optoelectronics
Transistor
lateral field
gan algan
normally off
Correction
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