Does-enhancement effects in MOSFET IC's for standard /sup 60/Co exposure facilities

1983 
CMOS dosimeters sensitized to ionizing radiation by ion implantation have demonstrated dose enhancement of 55 percent in typical /sup 60/Co facilities. Pairs of these IC's, one type with an alumina lid over the silicon chip and the other with a gold-kovar lid were used to evaluate this effect. Additional tests with a 1.3-mm-thick lead filter show that the enhancement is predominately induced by low-energy components in the radiation fields.
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