Defects in hydrogenated amorphous silicon created by intense pulsed illumination at low temperature and the decay of their density

We present density of dangling bonds of silicon created in a-Si:H films by illumination of intense pulsed light at low temperature. The density of the photo-created dangling bonds decreases at room temperature with increasing time from illumination with a decay time estimated to be approximately 4.2 × 106 s (48 days). The results are compared with the intensity and lifetime of defect PL in a-Si:H films measured at various time from the pulsed illumination.