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Fabrication of a 150 nm Gate AlGaN/GaN HEMT Using i-Line Stepper
Fabrication of a 150 nm Gate AlGaN/GaN HEMT Using i-Line Stepper
2021
Yuji Ando
Hidemasa Takahashi
Akio Wakejima
Jun Suda
Keywords:
Stepper
Line (electrical engineering)
Optoelectronics
algan gan
High-electron-mobility transistor
Materials science
Fabrication
Correction
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