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Low on‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures
Low on‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures
2019
Riad Kabouche
Idriss Abid
R. Püsche
Joff Derluyn
Stefan Degroote
Marianne Germain
Alaleh Tajalli
Matteo Meneghini
Gaudenzio Meneghesso
Farid Medjdoub
Keywords:
Superlattice
Silicon
Condensed matter physics
Heterojunction
Physics
Trapping
on resistance
Correction
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