Growth of GaN and AlGaN by high temperature vapor phase epitaxy

We investigated the influence of the growth temperature on high temperature vapor phase epitaxy of GaN. An almost direct proportionality between the growth rate and the Ga vapor pressure is observed. At optimum conditions growth rates as high as 210 /spl mu/m/h (T=1150/spl deg/c) are achieved. The maximum growth rate is believed to be limited by the supply of ammonia and the starting composition of GaN. Under optimum GaN growth conditions AlGaN layers were grown starting from previously alloyed Al-Ga as well as from co-evaporation of Ga and Al. Adding Al leads to a significant reduction of growth rate and increases the homogeneity of the layers. However, in almost all cases phase separation is found. Besides the binary GaN and AlN phases an intermediate AlGaN phase appears.