Transistor of low temperature polysilicon thin film and producing method
2003
Low temperature polysilicon thin film transistor and a manufacturing method, a low temperature polysilicon thin film transistor comprising a channel region, which method is characterized in that the channel region of the plasma treatment process, the activation voltage to adjust a low temperature polysilicon thin film transistor. Since the plasma treatment is performed to adjust the activation voltage LTPS transistor, increased process flexibility.
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