Heteroatom substituted naphthalimide polymer semiconductor as well as preparation method and application thereof

The invention discloses a heteroatom substituted naphthalimide polymer semiconductor as well as a preparation method and application thereof. The polymer is represented by formula I (shown in the specification). The polymer has the advantages that the synthetic routes of monomers and copolymers of the monomers are simple and efficient, the raw materials are easily available, and the development cost is low; a synthetic method has the advantages of excellent universality, repeatability and the like and can be popularized and applied to the synthesis of other heteroatom substituted NDI copolymer semiconductors. FETs prepared from the NDI copolymer semiconductors as active layer films presents unprecedentedly high carrier mobility, the maximum cavity rate and the electronic mobility respectively reach 1.7cm /V.s and 8.5cm /V.s, and the excellent potential of the polymer semiconductors applied in flexible organic electronics field is adequately presented.