Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65 nm advanced complementary metal oxide semiconductor technology

Abstract In this work, cells based on TiN/TaO x /TiN metal–insulator–metal structure, fabricated in a 65 nm complementary metal oxide semiconductor technology, are investigated in order to propose a good stack candidate for multiple time programmable (MTP) applications. Firstly, the oxide material thickness and stoichiometry are optimized to minimize the forming voltage and the RESET current. Programming energies of the devices under different current compliance during the SET operation and with different cell size are studied putting in evidence the filamentary mechanism. Very high speed and low voltage for the ON (SET) operation are demonstrated. High thermal stability up to 125 °C is demonstrated in the SET/RESET states of the device (with an R OFF /R ON ~ 100). Promising data retention exceeding 24 h at 250 °C is also shown. Finally, due to the stability of this device, the high potential of TaO x -based resistive random access memory for MTP applications is demonstrated.