SPIN-DEPENDENT CURRENT IN S-O-S BASED STRUCTURES

In this paper we studied structures in the form of strips of silicon on sapphire, where Schottky barriers were formed. They demonstrate the presence of spin-dependent current at room temperature. Current-voltage, frequency and field characteristics for spin-dependent and overall currents were experimentally investigated, and the influence of light on them. The mechanisms of current flow in such structures are proposed, and the experimental results are in good correlation with evaluations. An existence of two competing spin-dependent channels of current flow is revealed in studied structure, and they can compensate each other under certain conditions.