Method for growing n-type transparent conducting ZnO crystal thin film by F doping

The invention discloses a method for growing an n-type transparent conducting ZnO crystal thin film by F doping, which adopts a pulse laser deposition method. A target material is a sintering ceramic target moulded by pressing pure zinc oxide and pure zinc fluoride power subjected to ball-milling and mixing, wherein the molar content of zinc fluoride is 1-3 percent; and then the n-type transparent conducting ZnO crystal thin film grows on a substrate in a growth chamber of a pulse laser deposition device by adopting pure O2 as a growing atmosphere and controlling O2 pressure of 0.05-0.5Pa, the laser frequency of 3-5Hz and the growth temperature of 30-500 DEG C. The method can realize real-time doping, and the doping concentration is controlled by adjusting the growth temperature and the molar content of F in the target material. The n-type ZnO crystal thin film prepared by the method of the invention has favorable optoelectronic performance, repeatability and stability.