A Novel Channel Boost Capaatance(CBC) Cell Technology with Low Program Disturbance

Tnis paper describes a novel channel Boost apacitance(CBC) cell technology suitable for highly ded and fast-programming NAND flash memories. The CBC cell realizes a very high channel boost ratio in selfboosted probg[l] without additional gate control, and drastically improves program disturbance with decreasing design rule, especially less than 0.2um-mle. This memory cell is essential for realizing highly scaled, and fast-progamming NAND flash memories of &bit and beyond.