Creation of Modified Layers of Alkali-Halide CVrystals by Ion Implantation Methods

The peculiarities of using beams of accelerated metal ions for creating modified layers in alkali-halide crystals for optoelectronics, integrated optics and photonics problems are considered. Beams of silver and copper ions were generated by two types of sources. In a source of the first type MEVVA, a beam of accelerated ions (energy 50-200 keV, current $200 \boldsymbol{\mu}\mathbf{s}$ ). A second type source with a voltage of $\leqslant 2\ \mathbf{kV}$ , a current of less than 10 kA and a duration of about $1\ \boldsymbol{\mu} \mathbf{s}$ generated a beam of multiply charged ions, which were accelerated by the collective mechanism to energy in a wide range of values from units to hundreds of keV with an average energy of 40-70 keV. When the LiF and KCl crystals were irradiated with the ion beams, layers containing ions and clusters of beam particles were formed in the crystals. Optical and X-ray fluorescence methods have established that the thickness of the implanted layer is $1-3\ \boldsymbol{\mu} \mathbf{m}$ . These results show that a table-top source of high-energy beams of metallic ions can be used to create modified micron scale layers in optical crystals.