Comparison of 3D potential structures at different pn-junctions in FIB-prepared silicon and germanium samples measured by electron-holographic tomography

The functionality of electronic nanodevices is essentially determined by location, extension and concentration of the enclosed doped areas. Therefore, the manufacturing of those areas is one of the most important tasks in semiconductor industry. In general, it consists of two steps: First, the dopant material has to be inserted into the lowly doped semiconductor substrate. Then, the inserted dopants have to become electrically activated. Electron holography allows to monitor the outcome of both processes simultanously by providing 2D mapping of the resulting electrostatic potential distribution in the semiconductor [1].