A new evaluation method of plasma process-induced Si substrate damage by the voltage shift under constant current injection at metal/Si interface
1998
We propose a new evaluation method of plasma process induced Si substrate damage, which utilizes the voltage shift under constant-current injection (VSCCI) at metal-Si interface. This method is applied to the plasma damaged Si substrate and the obtained depth profile of the defects in the Si correlates well with the electrical metal/Si contact property.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
7
References
10
Citations
NaN
KQI