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Amorphous Metal Oxide Bilayers to Avoid Sneak‐Path Currents for High‐Density Resistive Memory Arrays
Amorphous Metal Oxide Bilayers to Avoid Sneak‐Path Currents for High‐Density Resistive Memory Arrays
2021
Shruti Nirantar
Ataur Rahman
Edwin L. H. Mayes
Madhu Bhaskaran
Sumeet Walia
Sharath Sriram
Keywords:
Path (graph theory)
high density
Vanadium oxide
Resistive random-access memory
Oxide
Strontium titanate
Optoelectronics
Amorphous metal
Materials science
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