Old Web
English
Sign In
Acemap
>
Paper
>
Impact of Neutron-Induced Displacement Damage on Electrical Characteristics of 4H-SiC SBDs and MOSFETs
Impact of Neutron-Induced Displacement Damage on Electrical Characteristics of 4H-SiC SBDs and MOSFETs
2018
D. S. Chao
H.-Y. Shih
J.Y. Jiang
Chih-Fang Huang
C. Y. Chiang
C.-S. Ku
K.Y.Lee
Keywords:
Optoelectronics
SBDS
Materials science
Neutron
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]