Performance Analysis of CNTFET based 6T SRAM Cell with Tube and Chiral Variation under 16 and 32 nm Technologies

This paper deals with the performance analysis of Carbon Nanotube Field Effect Transistor (CNTFET) based 6TSRAM under different technologies. The efficiency of this circuit is observed by changing the number of tubes and the chiral vector of the device. Parameters like Average Power Consumption, Average Power Delay Product (PDP) and Average Delay were taken to consideration for observing the efficiency of the CNTFET based 6T SRAM. The results obtained show that the Average Power Consumption increases to almost 3 times when the value of chiral vector reaches maximum and 5 times for the maximum number of tubes in this observation. In case of average delay, the value becomes almost half when the chiral vector reaches maximum but there is a negligible change due to change in number of tubes. A similar change can be observed even when the channel length is varied.