Semiconductor device and method for manufacturing a hybrid contact structure contacts with a small aspect ratio in a semiconductor device

A method comprising: Forming a dielectric layer over a circuit element having a hole formed in a semiconductor region contact region; Forming a contact element in the dielectric layer such that it connects to the contact region, wherein the contact element comprises a first conductive material; Forming a recess in the contact member a portion of the first conductive material by removing; Forming a trench in the dielectric layer after forming the recess, said trench with the contact element is in communication; Forming a barrier material layer in the recess; and Filling the recess with a second conductive material different from the first conductive material, after forming the barrier material layer.