Metamorphic optoelectronic integrated circuits

As the required operational bandwidth of photoreceivers is increased, it becomes desirable to monolithically integrate photodiodes and transistors in order to optimize performance and enhance yield. In this paper we describe our demonstration of material and process capabilities which allow us to integrate high electron mobility transistors and 1.55 /spl mu/m PIN photodiodes on one substrate. The demonstration vehicles used for this are a DC-45 GHz traveling wave amplifier and a photodiode with 12 /spl mu/m optical windows. Measured results of three interconnection approaches (standard attenuator, optimized lossy match, buffer amplifier) are described.