Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga 2 O 3 Layer
2014
The authors report the fabrication of amorphous IGZO (a-IGZO) phototransistors with a thin Ga
2
O
3
layer. It was found that the performances of the phototransistors depend strongly on the oxygen partial pressure during the deposition of the Ga
2
O
3
layer. It was also found that the fabricated devices exhibited good electrical properties with electron mobility (μ
FE
) of 13.2 cm
2
/V·s, subthreshold swing (SS) of 0.13 V/decade, and ON/OFF current ratio> 5 × 10
5
. Furthermore, it was found that two cutoffs exist in the devices prepared with 25% oxygen partial pressure. The deep-ultraviolet (UV)-to-visible rejection ratio and near-UV-to-visible rejection ratio of the fabricated phototransistors were 10
4
and 20, respectively.
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