Effects of SR irradiation on tin-doped indium oxide thin film prepared by rf magnetron sputtering

The effects of synchrotron radiation (SR) irradiation on the electrical properties of tin-doped In2O3 (ITO) thin films prepared by rf magnetron sputtering have been studied. A white SR beam focused by a cylindrical mirror was used to irradiate ITO thin films at doses of 0.35, 1.98, 3.50, and 6.64 mA h. We have achieved resistivity of 2×10−4 Ω cm on ITO thin film at an irradiation dose of 3.5 mA h without extra heating. The mobility of the ITO films did not decrease after SR irradiation. The electrical properties in connection with the structural change due to SR are discussed.