A charge-sheet capacitance model based on drain current modeling

Analytical models of the drain current and the capacitances of a MOSFET are formulated using the charge-sheet approach. Mobility reduction due to velocity saturation and interface scattering of carriers are taken into account. A saturation criterion is developed from the condition of output conductance continuity. The capacitance modeling does not require additional parameters not contained in the DC model. Comparison with experimental data confirms that the theory is useful for analog circuit simulation down to channel lengths of about 1 mu m. >