Submicron InP DHBT Technology for High-Speed High-Swing Mixed-Signal ICs

We report on the development of a submicron InP DHBT technology, optimized for the fabrication of ges50-GHz- clock mixed-signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Various size submicron devices have been modeled using UCSD- HBT equations. These large signal models have allowed the design of 50-GHz clocked 50 G Decision and 100 G Selector circuits. The high quality of the measured characteristics demonstrates the suitability of this technology for the various applications of interest, like 100 Gbit/s transmission.