Observation of negative differential resistance in GaAs field‐effect transistors

Negative differential resistance (NDR) is observed in GaAs metal‐semiconductor field‐effect transistors. The device under test is a GaAs dual‐gate device. The observation of NDR is attributed to intervalley transfer in GaAs. The characteristic is field controlled and is n type in shape. NDR can be controlled by independent control of the two gates. It is also seen for a fixed ratio of gate voltages.