Synthesis of SiGe and SiGeC alloys formed by Ge and C implantation

In this study, near surface SiGe and SiGeC alloys with germanium peak composition up to 16 at.% were formed using high‐dose ion implantation and subsequent solid phase epitaxial growth. Rutherford backscattering spectroscopy (RBS) channeling spectra and cross‐sectional transmission electron microscopy (XTEM) studies showed that high quality Si0.92Ge0.08 and Si0.91Ge0.08C0.01 crystals were formed at the Si surface, while Si0.84Ge0.16 and Si0.82Ge0.16C0.02 layers had extended defects. X‐ray diffraction experiments demonstrated that carbon could reduce the lattice strain in SiGe alloys but without significant crystal quality improvement as detected by RBS channeling spectra or XTEM observations.