Qbd− dependencies of ultrathin gate oxides on large area capacitors

Abstract In this paper a systematic study of the dependence of intrinsic Q bd − distributions (gate injection) on oxide thickness (3.5 – 5.7nm), area (0.04 – 12.25 mm 2 ) and current density (−0.3 to −250 mA/cm 2 ) is reported. The oxides were grown with a similar optimized diluted oxygen furnace process. An increased dependence of Q bd − to area and current density is noticed as the oxide thickness decreases in the ultrathin region. A model is proposed in which initially created, electrical stress induced, local traps and a decreased total amount of additional traps to initiate breakdown account for the shown dependencies.