Top electrode-dependent retention characteristics of thin-film transistors with carbon nanotube/(Bi,Nd)4Ti3O12 structure

Abstract Gradient stripe patterns of Single-Walled Carbon Nanotubes (SWCNTs) were fabricated by using the evaporation-induced self-assembly technique. Additionally, the nonvolatile thin-film transistors (TFTs) with SWCNTs and (Bi,Nd) 4 Ti 3 O 12 (BNT) insulators were fabricated. The retention characteristics were investigated in Pt/SWCNTs/BNT/LaNiO 3 and LaNiO 3 /SWCNTs/BNT/LaNiO 3 structures. Results revealed that LaNiO 3 /SWCNTs/BNT/LaNiO 3 TFTs demonstrate larger on-state current, wider memory window, better fatigue endurance performance and retention characteristics, compared with Pt/SWCNTs/BNT/LaNiO 3 TFTs because of the involvement of the oxide conductive electrodes. These results suggest that the SWCNTs/BNT TFTs with LaNiO 3 as the electrodes are suitable for next-generation nonvolatile memory devices and integrated circuits.