Vibration spectroscopy for surface layers on Si

Abstract We show that thin infrared-active layers on Si can be observed sensitively and with high resolution using FTIR spectroscopy (Fourier-transform infrared). Experiments make use of radiation polarized perpendicular to the interface in a multiple internal reflection geometry. We analyze the case of thin SiO 2 on Si to show how signals must be interpreted. We compare the spectra of several native oxides.