Fabrication of E-mode all-GaN devices with self-terminated and self-alignment process

All-GaN cascode devices were realized by integrating the GaN MIS-FET and MIS-HEMT on wafer by self-terminated and self-alignment process. Thus, only one additional mask was needed compared with the single-GaN devices for the recess gate patterned. The fabricated device delivers a threshold voltage $(V_{th})$ of 3.6 V. The hysteresis $(\Delta V_{th})$ is 0.6 V and the hard breakdown is observed at 883V.