Rabi oscillations in single InGaAs/GaAs quantum dots embedded in modified H2 photnic crystal microcavities

Modification of the inner holes has a great influence on the quality factor of photonic crystal microcavities. So far, only experiments on modified H1 and L3 geometries were performed. Here we report on fabrication and spectroscopic characterization of H2 microcavities with modification of the position of the inner holes. We found that the quality factor can be significantly increased in comparison to non-modified structures. We chose to investigate the H2 cavity, because it has the potential to offer high Q-factors for larger defect regions. This is expected to offer more degrees of freedom for future designs of functionalized defect regions, for example with electric contact pads to the center of the defect region. Using this kind of cavities, we have investigated the p-shell Rabi oscillations of an exciton in a single InGaAs/GaAs quantum dot. We performed pulsed resonant excitation in the p-shell and detected the emission from the s-shell. To study the effect of the cavity on the p-shell Rabi oscillations, we have done experiments where a cavity mode is on- and off-resonance with the s-shell.