Determination of ad hoc deposited charge on bare SOI wafers

This work develops an analytical model which correlates the changes of the threshold voltages in Pseudo-MOSFET structures with the charge intentionally placed on the surface of the native oxide. The model has been validated through experimental I-V characteristics obtained when the surface is physically altered with an APTES solution. The measurements were performed in 15 MESA isolated SOI cells. These results open the path for the potential use of the bare SOI wafers as a platform for charge-based sensing applications.