Individual core-shell structured ZnSnO3 nanowires as photoconductors

Abstract Photoconducting properties of individual ZnSnO 3 nanowires are investigated by performing transport measurement with UV and green laser illumination on/off circles. ZnSnO 3 nanowires are of core-shell structures with the presence of a grain boundary between the inner and outer layer. Upon exposure to UV illumination, the current of one single ZnSnO 3 nanowire greatly increases by about three orders of magnitude, from 0.3 to 162 nA. And the conductance increases by a factor of 22 under green laser illumination. Such behaviors are ascribed to that the illuminations adjust the grain boundary barrier. These results demonstrate a promising approach to fabricate nanosized photoconductors and optoelectronic switches.