Effect of oxygen pressure on the structure and thermal stability of ultrathin Al 2 O 3 film

We were successful in the growth of uniform, stoichiometric, and ultrathin Al2O3 film with an atomically abrupt interface with Si(001). High-pressure reoxidation (HPO)oxidation led to the formation of interfacial SO2 film, which grew in a layered manner. The oxygen pressure of the ambience plays an important role in the transport, chemical reactions and stability of the Al2O3/Si(001) interface at various substrate temperatures.