Radiation effect on GaAs interface. Final report, Feb 1974--Aug 1975. [Neutron radiation]

The C-V and Q-V technique was applied to the study of interface charge distributions of GaAs epitaxial layers grown on semi-insulating substrates. Changes of mobility and free carrier concentration in the epitaxial layer and extending through the interface into the substrate were determined before and after exposure to a neutron fluence of 2.7 x 10 to the 15th power n/sq cm and a total dose of ionizing radiation of 10 to the 8th power rad (GaAs). Changes at the interface and in the epitaxial layer are correlated with the voltage-current characteristic variations of the GaAs junction field-effect transistors. (GRA)