Analysis of Gate-Noise in Hard Switching and Soft Switching for Half-Bridge Structure Using GaN HEMT

This paper presents the comparative analysis and experimental results of the difference of gate noise generated in both hard switching and soft switching in a half-bridge dc-dc converter with GaN HEMT. In addition to each switching method, we also present a comparative experimental result on the variation of various parameters such as parasitic component, drain-source voltage, switching frequency, and gate resistance to gate noise. Through the analysis and experimental results, design guidelines are presented to minimize gate noise.