Effects of N-ion-implantation and post-thermal annealing on ZnO:Mg thin films

X-ray diffraction (XRD), photoluminescence (PL) and optical absorption measurements. Results showed that diffraction peaks and PL intensities were decreased by N ion implantation, but they partially recovered after thermal annealing. In this experiment, all films exhibited high resistivity and p-type conduction was not observed after N ion implantation.