Effects of N-ion-implantation and post-thermal annealing on ZnO:Mg thin films
2009
X-ray diffraction (XRD), photoluminescence (PL) and optical absorption measurements. Results showed that diffraction peaks and PL intensities were decreased by N ion implantation, but they partially recovered after thermal annealing. In this experiment, all films exhibited high resistivity and p-type conduction was not observed after N ion implantation.
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