GLOBALIZATION AND HIV/AIDS POLICIES IN AFRICA

Described is an SRAM cell made from two cross-coupled inverters. The output from each inverter is a data node, and the two data nodes store logical complementary signals. Each data node is connected to a pass transistor that is coupled directly to the power supply voltage, rather than coupled to a pair of bitlines. The inverters can be connected to a reading circuit, a writing circuit, or a stand-by circuit as desired for different phases of the memory operation. Data is read from the SRAM cell by using a current sensing differential amplifier. Data is written to the SRAM cell by controlling voltages on the cross-coupled inverters, and compatible with conventional writing signals.