Terahertz response of Schottky wrap gate‐controlled quantum dots

THz responses of Schottky wrap gate (WPG)-controlled quantum dots were investigated. Normal incidence THz irradiation on single-dot and multi-dot devices with a CH3OH laser (2.54 THz) changed the conductance behavior and produced an additional conductance peak in the I–V characteristics of WPG single electron transistors (SETs) at 5–20 K. The effect depended on the THz electric field polarization. The observed behavior was explained by photon assisted tunneling based on the Tien–Gordon theory.