TOF-SIMS and XPS-investigations of ion implanted single crystal 1b-diamonds

Near surface zones of 48Ti- and 52Cr-implanted single crystal diamonds (1b-MCD) were characterized by XPS, TOF-SIMS and white light interference microscopy (WLI). By the combination of WLI and TOF-SIMS it was possible to calibrate the depth scale of TOF-SIMS and XPS depth profiles quantitatively. The adjustment of TOF-SIMS and XPS elemental depth profiles in the implantation maximum increases the quantitative detection limit of the implanted elements by more than two orders of magnitude and enables the interpretation of results from wear simulation experiments. Peak fits of XPS C1s-photolines indicate the fraction and chemical nature of carbide-like structures in the implantation zone. Qualitative hints on carbide compounds are possibly included in the reconstructed TOF-SIMS spectra but this information can presently only be extracted with the aid of XPS analyses.