Temperature Dependence of the UPS and HREELS of HN3 and DN3 on Si(110).

1992 
Abstract HN 3 was used for the first time as a nitrogen source for nitridation of Si surfaces. Its interaction with Si(110) was studied with HREELS and UPS at temperatures between 120 and 1350 K. HN 3 was found to adsorb molecularly on the Si surface at 120 K, as all molecular vibrational peaks, such as HN-NN stretching at 150 meV, HNN = N stretching at 265 meV and H-NNN stretching at 414 meV, were clearly observed in HREEL spectra. A similar HREELS study of DN 3 was carried out to confirm some of the EELS assignments. Upon warming up to 220 K, HN 3 started to dissociate into N 2 and NH, which further dissociated to give N and H as the surface was annealed from 580 to 800 K. H adatoms were observed to desorb at T > 800 K, while N remained on the surface, forming Si 3 N 4 at T ≅ 1350 K.
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