A method for producing a photomask having a Transparenzeinstellschicht

A method for producing a photomask having a main pattern and with Transparenzeinstellmusterelementen, the method comprising: Forming a photomask having a main pattern (150) formed on the side remote from a light source side of the photomask substrate (100); Transmitting an image of the main pattern to a wafer by directing an exposure onto the wafer through the photomask in an exposure method, and using the mapping to generate a pattern on a wafer from elements of critical dimensions (CD) consists; Quantifying the critical dimensions (CD), to achieve a distribution of values ​​of the critical dimensions on the wafer; Comparing the values ​​of critical dimensions (CD) with a reference value of the critical dimensions (CD) to determine the difference between them; Determining the extent that the intensities of the exposure, which are used in the exposure process, must be reduced by, in relation to locations on the photomask to the respective differences between the values ​​...