Field effect transistor of sic for high temp. application, use of such transistor and its mfg. method

SiC field effect transistor for high-temperature applications in which the gate electrode having (12) a front surface (14) vertically separated from the source region layer (4), a drain region layer (5) and a channel region layer (6, 7 ), for reducing the electric field at the front surface of the operation of the transistor, as in the gas sensor operation, allowing all the electrodes except for the gate to be protected from exposure to the atmosphere.