Fabrication of stationary micro-optical shutter based on semiconductor-to-metallic phase transition of W-doped VO2 active layer driven by an external voltage

The authors have successfully fabricated stationary micro-optical shutter arrays based on the well-known transmitting semiconductor (on) to the reflecting metallic (off) phase transition of thermochromic W-doped VO2 active layers operating at room temperature and driven by an external voltage. This shutter consists of 16 active planar micro-optical slits for which the optical switching (either transmittance or reflectance) can be controlled individually. This allows performing any desirable on-off switching combinations. The current-voltage characteristic of the micro-slit shows that the current jumps when the phase transition occurs. Transmittance switching as high as 25 dB and reflectance switching of about 6 dB were achieved with this device at λ=1.55 μm. Therefore, this electrically controllable VO2-array can be used as a stationary Hadamard shutter to increase the sensitivity of infrared spectrometers.