Erbium implanted in III-V materials

Erbium impurities were implanted in binary, ternary and quaternary III–V semiconductors. The main erbium emission centered at 1.54 µm is an invariant for III–V semiconductors having a band gap energy higher than the intrashell transition energy of Er 4f electrons (0.805 eV). The erbium emission is independent of the emission temperature from 2 K to 300 K.