Interfacial free energies determined from binary embedded alloy nanocluster geometry

The equilibrium geometries of embedded binary eutectic alloy nanostructures are used to determine the interfacial free energies between two phases of a strongly segregating alloy and the matrix. The solid Ge-SiO2 interfacial free energy at 600°C is determined to be 0.82–0.99 J/m2, in good agreement with estimates obtained from stress relaxation experiments.