Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS

Single-crystal silicon (Si) of six monolayer thickness was epitaxially grown on epi-germanium (Ge) in the (001) orientation at substrate temperatures lower than 300 °C, followed by direct depositio...