Electrode structure, method of manufacturing the electrode structure, phase changeable memory device having the electrode structure and method of manufacturing the phase changeable memory device

Enhanced structural stability and an electrode structure having an electrical characteristic, its preparation method, the phase change memory device and a manufacturing method thereof including the same are disclosed. The electrode structure comprises a pad, a first insulating film pattern, a second insulating film and the electrode pattern. A first insulating film pattern is formed on a pad having a first opening exposing the pad part. A second insulating layer pattern is formed on the first insulating film pattern, and a second opening communicating with the first opening. Electrode fills the first and second openings are formed on the pad. Claim by 1 and can significantly improve the stability of the electrode structure, because the support 2, the insulating film patterns surrounding the electrode, performing a first chemical mechanical polishing step by using the pattern 2, the insulating film having a high etch selectivity with respect to the electrodes, the the thickness of the second insulating layer pattern at the same time to prevent a deviation occurs, it is possible to significantly improve the flatness of the electrode.