Towards industrialisation of GaN-on-Si based high brightness blue LEDs

The manufacturability of blue LED structures grown on 6-inch Si (111) substrates is reported. The totally epi-structure thickness is only 3.75 μm, which allows faster epitaxy process throughput and lower manufacturing costs. Well controlled strain engineering leads to a room temperature wafer bow of 0 ± 5 μm and a highly uniform photoluminescence wavelength standard deviation of 1.1 nm. XRD FWHM (002) and (102) are 380 and 390 arcsec, respectively. For a blue 1×1 mm2 vertical thin film die with silicone dome lens, the optical light output power of 563 mW at an operating voltage of 3.05 V is achieved at 350 mA. Excellent leakage current (IR) yield is achieved with over 95% of dies exhibiting IR < 0.1 μA at -5 V. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)