Exploration of Stepped Recessed Gate Silicon- On-Nothing MOSFET for Enhancing Self Heating Effect

A thoughtful analysis of a rectangular grooved stepped gate Silicon-on-nothing (RGSG-SON) MOSFET using TCAD simulator to control the short channel effects (SCEs) is presented in this paper. An evaluation has been performed between SOI and SON grooved gate MOS structures to realize the capability of the proposed structure. The exploration revealed that RGSG-SON MOSFET is more proficient as compared to grooved gate silicon on insulator (SOI) MOS structure with respect to sub-threshold performance and immunity to SCEs. Further the amalgamation of higher thermal conductivity such as air in the buried layer, the proposed structure can suppress the self- heating effect. So this thoughtful exploration is comparatively valuable to investigate the performance development of grooved gate SON over SOI for nano scaled MOSFET.